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Manufacturer
Semikron
Country
Germany
Part number
SKM200GB12T4
Description
IGBT halfbridge - trench
Stock availability:
On request
Price: On request
On request
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| Product Attribute | Attribute Value | Search |
|---|---|---|
| Channel Type | N | |
| Collector Current | 310 A | |
| Collector to Emitter Shorted Voltage | 1200 V | |
| Collector to Emitter Voltage | 1200 V | |
| Configuration | Dual | |
| Continuous Collector Current | 313 A | |
| Dimensions | 106.4 x 61.4 x 30.5 mm | |
| Energy Rating | 20.2 mJ | |
| Gate to Emitter Voltage | 20 V | |
| Height | 1.201" (30.5mm) | |
| Length | 4.188" (106.4mm) | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Mounting Type | Screw | |
| Number of Pins | 7 | |
| Package Type | Semitrans3 | |
| Resistance, Thermal, Junction to Case | 0.038 K/W | |
| Series | IGBT Series | |
| Temperature Operating Range | -40 to +175 °C | |
| Type | Trench | |
| Width | 2.417" (61.4mm) |
