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Manufacturer
onsemi
Country
USA
Part number
FDB86363-F085
Description
N-Kanal, 80 V, 110 A, 0,0038 Ohm, TO-263 (D2PAK), Oberflächenmontage Typenbezeichnung: DB86363F085 Transistortyp: MOSFET Steuerkanaltyp: N-Kanal Maximale Verlustleistung (Pd): 300 W Maximale Drain-Spannung -Quelle |Vds| : 80 V Maximale Gate-Source-Spannung |Vgs|: 20 V Maximale Gate-Schwellenspannung |Vgs(th)|: 4 V Maximaler Drain-Strom |Id|: 110 A Maximale Sperrschichttemperatur (Tj): 175 °C Gate-Gesamtladung (Qg): 131 nC Anstiegszeit (tr): 129 ns Drain-Source-Kapazität (Cd): 1400 pF Maximaler Drain-Source-Einschaltwiderstand (Rds): 0,0024 Ohm
Stock availability:
On request